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IXFN38N80Q2 Datasheet

  • IXFN38N80Q2

  • N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low ...

  • 5頁(yè)

  • IXYS   IXYS

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HiPerFET
TM
Power MOSFETs
Q2-Class
IXFK 38N80Q2
IXFN 38N80Q2
IXFX 38N80Q2
V
DSS
I
D25
R
DS(on)
=
=
=
800 V
38 A
220 m鈩?/div>
鈩?/div>
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Low intrinsic R
g
Preliminary Data Sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
F
C
Weight
50/60Hz, RMS t =1 min
I
ISOL
< 1mA t = 1s
Mounting torque
Terminal torque
Mounting force
SOT-227B
TO-264
SOT-227B
PLUS-247
PLUS247
TO-264
SOT-227B
Test Conditions
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
,
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
Maximum Ratings
800
800
鹵30
鹵40
38
150
38
75
4.0
20
735
-55 ... +150
150
-55 ... +150
1.6mm (0.063in) from case for 10s (Plus247, TO-264) 300
2500
3000
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
V~
V~
t
rr
鈮?/div>
250 ns
PLUS 247
TM
(IXFX)
G
D
D (TAB)
TO-264 AA (IXFK)
G
D
S
D (TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
G
S*
S*
D
* Either Source terminal can be used as
main or Kelvin source terminal
G = Gate
S = Source
D = Drain
TAB = Drain
0.9/8 Nm/lb.in.
1.5/13 Nm/ib.in.
22...130/5...30
g
10
30
N/lb
g
g
Features
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
miniBLOC package version with
Aluminum Nitrate isolation
Advantages
Easy to mount
Space savings
High power density
DS99150A(09/04)
Symbol
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
800
2.0
4.5
鹵200
T
J
= 25擄C
T
J
= 125擄C
50
2
V
V
nA
碌A(chǔ)
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
鹵30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
220 m鈩?/div>
漏 2004 IXYS All rights reserved

IXFN38N80Q2 產(chǎn)品屬性

  • 10

  • 半導(dǎo)體模塊

  • FET

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 800V

  • 38A

  • 220 毫歐 @ 500mA，10V

  • 4.5V @ 8mA

  • 190nC @ 10V

  • 8340pF @ 25V

  • 735W

  • 底座安裝

  • SOT-227-4，miniBLOC

  • SOT-227B

  • 管件

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