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IXFN36N60 Datasheet

  • IXFN36N60

  • HiPerFET Power MOSFET

  • 195.92KB

  • 4頁

  • IXYS   IXYS

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IXFK 32N60
IXFK 36N60
Preliminary Data
IXFN 32N60
IXFN 36N60
I
D25
R
DS(on)
0.18鈩?/div>
0.25鈩?/div>
t
rr
250ns
250ns
V
DSS
HiPerFET Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
TM
IXFK/FN 36N60 600V 36A
IXFK/FN 32N60 600V 32A
TO-264 AA (IXFK)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMSt = 1 min
I
ISOL
鈮?/div>
1 mAt = 1 s
Mounting torque
Terminal connection torque
-55 ...
300
-
-
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C, Chip capability
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
Maximum Ratings
IXFK IXFN
600
600
鹵20
鹵30
32N60 32
36N60 36
32N60 128
36N60 144
20
30
5
500
-55 ...
600
600
鹵20
鹵30
32
36
128
144
20
30
5
520
+150
150
+150
-
2500
3000
V
V
V
V
A
A
A
A
A
mJ
V/ns
W
擄C
擄C
擄C
擄C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Features
鈥?/div>
International standard packages
鈥?/div>
JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
鈥?/div>
miniBLOC with Aluminium nitride
isolation
鈥?/div>
Low R
HDMOS
TM
process
DS (on)
鈥?/div>
Rugged polysilicon gate cell structure
鈥?/div>
Unclamped Inductive Switching (UIS)
rated
鈥?/div>
Low package inductance
鈥?/div>
Fast intrinsic Rectifier
Applications
鈥?/div>
DC-DC converters
鈥?/div>
Synchronous rectification
鈥?/div>
Battery chargers
鈥?/div>
Switched-mode and resonant-mode
power supplies
鈥?/div>
DC choppers
鈥?/div>
Temperature and lighting controls
鈥?/div>
Low voltage relays
Advantages
鈥?/div>
Easy to mount
鈥?/div>
Space savings
鈥?/div>
High power density
92807G (01/96)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030
Fax: +49-6206-503629
G = Gate
S = Source
G
D
S
D (TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
D = Drain
TAB = Drain
Either Source terminal at miniBLOC
can be used as Main or Kelvin Source
0.9/6 1.5/13
- 1.5/13
10
30
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
Min. Typ. Max.
600
2
4.5
鹵200
T
J
= 25擄C
T
J
= 125擄C
400
2
0.18
0.25
V
V
nA
碌A(chǔ)
mA
鈩?/div>
鈩?/div>
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
36N60
Pulse test, t
鈮?/div>
300
碌s,
duty cycle
鈮?/div>
2 % 32N60
漏1996 IXYS Corporation. All rights reserved.
I
XYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700
Fax: 408-496-0670

IXFN36N60 產(chǎn)品屬性

  • 10

  • 半導體模塊

  • FET

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 600V

  • 36A

  • 180 毫歐 @ 500mA，10V

  • 4.5V @ 8mA

  • 325nC @ 10V

  • 9000pF @ 25V

  • 520W

  • 底座安裝

  • SOT-227-4，miniBLOC

  • SOT-227B

  • 管件

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