HiPerFET
TM
Power MOSFETs
Single DieMOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Preliminary data sheet
IXFN 34N80
D
V
DSS
= 800 V
I
D25
= 34 A
R
DS(on)
= 0.24
W
t
rr
攏
250 ns
S
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
Maximum Ratings
800
800
鹵20
鹵30
34
136
34
64
3
5
600
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
V~
V~
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
Features
路
International standard packages
路
miniBLOC, with Aluminium nitride
路
路
路
路
路
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
ISOL
攏
1 mA
t = 1 min
t=1s
300
2500
3000
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min.
typ.
max.
800
0.096
3.0
-0.214
鹵200
T
J
= 25擄C
T
J
= 125擄C
100
2
0.24
5.0
V
%/K
V
%/K
nA
mA
mA
W
Applications
路
DC-DC converters
路
Battery chargers
路
Switched-mode and resonant-mode
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DSS
temperature coefficient
V
DS
= V
GS
, I
D
= 8 mA
V
GS(th)
temperature coefficient
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
power supplies
路
DC choppers
路
Temperature and lighting controls
Advantages
路
Easy to mount
路
Space savings
路
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
98529D (6/99)
漏 2000 IXYS All rights reserved
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