HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
50/60 Hz, RMS
I
ISOL
攏
1 mA
t = 1 min
t=1s
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C, Chip capability
Terminal current limit
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
IXFN 340N07
D
V
DSS
I
D25
R
DS(on)
= 70 V
= 340 A
=
4 mW
G
S
t
rr
攏
250ns
S
Maximum Ratings
70
70
鹵20
鹵30
340
100
1360
200
64
4
5
700
-55 ... +150
150
-55 ... +150
2500
3000
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
V~
V~
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
聲
International standard packages
聲
miniBLOC, with Aluminium nitride
isolation
聲
Low R
DS (on)
HDMOS
TM
process
聲
Rugged polysilicon gate cell structure
聲
Unclamped Inductive Switching (UIS)
rated
聲
Low package inductance
聲
Fast intrinsic Rectifier
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
70
2.0
4.0
鹵200
T
J
= 25擄C
T
J
= 125擄C
100
2
4
V
V
nA
mA
mA
mW
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 100A
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
聲
DC-DC converters
聲
Battery chargers
聲
Switched-mode and resonant-mode
power supplies
聲
DC choppers
聲
Temperature and lighting controls
Advantages
聲
Easy to mount
聲
Space savings
聲
High power density
98547B (10/00)
漏 2000 IXYS All rights reserved
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