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IXFN280N07 Datasheet

  • IXFN280N07

  • HiPerFET Power MOSFETs Single Die MOSFET

  • 2頁

  • IXYS   IXYS

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HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
IXFN 280N07
V
DSS
I
D25
D
R
DS(on)
t
rr
=
=
=
<
70 V
280 A
5 m鈩?/div>
鈩?/div>
250 ns
Avalanche Rated, High dv/dt, Low t
rr
Preliminary data sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C, Chip capability
Terminal current limit
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
,
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
50/60 Hz, RMS
I
ISOL
鈮?/div>
1 mA
t = 1 min
t=1s
T
C
= 25擄C
G
S
S
Maximum Ratings
70
70
鹵20
鹵30
280
100
1120
180
60
3
5
V
V
V
V
A
A
A
A
mJ
J
V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
600
-55 ... +150
150
-55 ... +150
2500
3000
W
擄C
擄C
擄C
V~
V~
Features
鈥?/div>
International standard packages
鈥?/div>
miniBLOC, with Aluminium nitride
isolation
鈥?/div>
Low R
DS (on)
HDMOS
TM
process
鈥?/div>
Rugged polysilicon gate cell structure
鈥?/div>
Unclamped Inductive Switching (UIS)
rated
鈥?/div>
Low package inductance
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
鈥?/div>
Fast intrinsic Rectifier
Applications
鈥?/div>
DC-DC converters
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
70
2.0
4.0
鹵200
T
J
= 25擄C
T
J
= 125擄C
100
2
V
V
nA
碌A(chǔ)
mA
鈥?/div>
Synchronous rectification
鈥?/div>
Battery chargers
鈥?/div>
Switched-mode and resonant-mode
power supplies
鈥?/div>
DC choppers
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 120A
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
鈥?/div>
Temperature and lighting controls
鈥?/div>
Low voltage relays
Advantages
鈥?/div>
Easy to mount
5 m鈩?/div>
鈥?/div>
Space savings
鈥?/div>
High power density
98555B (1/02)
漏 2002 IXYS All rights reserved

IXFN280N07 產(chǎn)品屬性

  • 10

  • 半導(dǎo)體模塊

  • FET

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 70V

  • 280A

  • 5 毫歐 @ 120A，10V

  • 4V @ 8mA

  • 420nC @ 10V

  • 9400pF @ 25V

  • 600W

  • 底座安裝

  • SOT-227-4，miniBLOC

  • SOT-227B

  • 管件

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