HiPerFET
TM
Power MOSFETs
Q-Class
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Preliminary data sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
50/60 Hz, RMS
I
ISOL
鈮?/div>
1 mA
t = 1 min
t=1s
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
,
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
IXFN 27N80Q V
DSS
I
D25
R
DS(on)
D
= 800
V
= 27
A
鈩?/div>
= 320 m鈩?/div>
G
S
S
Maximum Ratings
800
800
鹵20
鹵30
27
108
27
60
2.5
5
520
-55 ... +150
150
-55 ... +150
2500
3000
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄
C
擄
C
擄
C
V~
V~
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
鈥?/div>
International standard package
鈥?/div>
Epoxy meet
UL 94 V-0, flammability classification
鈥?/div>
miniBLOC with Aluminium nitride
isolation
鈥?/div>
IXYS advanced low Q
g
process
鈥?/div>
Rugged polysilicon gate cell structure
鈥?/div>
Unclamped Inductive Switching (UIS)
rated
鈥?/div>
Low package inductance
鈥?/div>
Fast intrinsic Rectifier
Applications
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min.
typ.
max.
800
2.5
4.5
鹵100
T
J
= 25擄C
T
J
= 125擄C
100
2
0.32
V
V
nA
碌A(chǔ)
mA
鈩?/div>
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
碌A(chǔ)
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
鈥?/div>
DC-DC converters
鈥?/div>
Battery chargers
鈥?/div>
Switched-mode and resonant-mode
power supplies
鈥?/div>
DC choppers
鈥?/div>
Temperature and lighting controls
Advantages
鈥?/div>
Easy to mount
鈥?/div>
Space savings
鈥?/div>
High power density
漏 2001 IXYS All rights reserved
98813 (04/01)
IXFN27N80Q 產(chǎn)品屬性
10
半導(dǎo)體模塊
FET
HiPerFET™
MOSFET N 通道，金屬氧化物
標(biāo)準(zhǔn)型
800V
27A
320 毫歐 @ 500mA，10V
4.5V @ 4mA
170nC @ 10V
7600pF @ 25V
520W
底座安裝
SOT-227-4，miniBLOC
SOT-227B
管件
IXFN27N80Q相關(guān)型號(hào)PDF文件下載
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描述
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