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IXFN230N10 Datasheet

  • IXFN230N10

  • Power MOSFETs Single Die MOSFET

  • 2頁(yè)

  • IXYS   IXYS

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Advanced Technical Information
HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
50/60 Hz, RMS
I
ISOL
鈮?/div>
1 mA
t = 1 min
t=1s
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C, Chip capability
Terminal current limit
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
,
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
IXFN 230N10
D
V
DSS
I
D25
R
DS(on)
t
rr
= 100
V
= 230
A
=
6 mW
< 250 ns
G
S
S
Maximum Ratings
100
100
鹵20
鹵30
230
100
920
150
64
4
5
700
-55 ... +150
150
-55 ... +150
2500
3000
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
V~
V~
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
聲
International standard packages
聲
miniBLOC, with Aluminium nitride
聲
聲
Rugged polysilicon gate cell structure
聲
Unclamped Inductive Switching (UIS)
聲
聲
Fast
rated
Low package inductance
intrinsic Rectifier
isolation
Low R
DS (on)
HDMOS
TM
process
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
100
2.0
T
J
= 25擄C
T
J
= 125擄C
4.0
鹵200
100
2
6
V
V
nA
碌A(chǔ)
mA
m
鈩?/div>
聲
聲
聲
聲
聲
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 聲 I
D25
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
Advantages
聲
聲
聲
Easy to mount
Space savings
High power density
漏 1998 IXYS All rights reserved
98548A (9/98)

IXFN230N10 產(chǎn)品屬性

  • 10

  • 半導(dǎo)體模塊

  • FET

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 100V

  • 230A

  • 6 毫歐 @ 500mA，10V

  • 4V @ 8mA

  • 570nC @ 10V

  • 19000pF @ 25V

  • 700W

  • 底座安裝

  • SOT-227-4，miniBLOC

  • SOT-227B

  • 管件

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