HiPerFET
TM
Power MOSFET
Single MOSFET Die
Preliminary data
Symbol
Test Conditions
V
DSS
I
D25
170A
170A
R
DS(on)
10mW
10mW
t
rr
200ns
200ns
IXFN170N10
IXFK170N10
100V
100V
TO-264 AA (IXFK)
Maximum Ratings
IXFK
IXFN
170N10
170N10
100
100
鹵20
鹵30
170聝
76
680
170
60
5
560
-55 ... +150擄C
150
-55 ... +150擄C
100
100
鹵20
鹵30
170
NA
680
170
60
5
V
V
V
V
A
A
A
mJ
S
G
D
S
V
DSS
V
DGR
聛
V
GS
V
GSM
I
D25
I
D125
聞
I
DM
聜
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C
Continuous
Transient
T
C
= 25擄C
T
C
= 125擄C
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
D (TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
V/ns
600 W
擄C
擄C
V~
V~
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
ISOL
攏
1 mA
t = 1 min
t=1s
300
N/A
N/A
0.9/6
N/A
10
N/A
2500
3000
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
Test Conditions
(T
J
= 25擄C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DSS
temperature coefficient
V
DS
= V
GS
, I
D
= 8mA
V
GS(th)
temperature coefficient
V
GS
=
鹵20V,
V
GS
= 0V
V
DS
= 0.8 鈥?V
DSS
V
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
攏
300 ms,
duty cycle d
攏
2 %
Min.
100
Characteristic Values
Typ.
Max.
0.077
V
%/K
4
-0.183
鹵200
V
%/K
nA
mA
mA
mW
Features
路
International standard packages
路
Encapsulating epoxy meets
UL 94 V-0, flammability classification
路
miniBLOC with Aluminium nitride
isolation
路
Low R
DS (on)
HDMOS
TM
process
路
Rugged polysilicon gate cell structure
路
Unclamped Inductive Switching (UIS)
rated
路
Low package inductance
路
Fast intrinsic Rectifier
Applications
路
DC-DC converters
路
Synchronous rectification
路
Battery chargers
路
Switched-mode and resonant-mode
power supplies
路
DC choppers
路
Temperature and lighting controls
路
Low voltage relays
Advantages
路
Easy to mount
路
Space savings
路
High power density
97505D (7/00)
2
T
J
= 25擄C
T
J
= 125擄C
400
2
10
IXYS reserves the right to change limits, test conditions, and dimensions.
漏 2000 IXYS All rights reserved
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