HiPerFET
TM
Power MOSFET
Single MOSFET Die
Preliminary data sheet
IXFN 150N15
V
DSS
I
D25
R
DS(on)
= 150 V
= 150 A
= 12.5 mW
t
rr
攏
250 ns
Symbol Test Conditions
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
ISOL
攏
1 mA
t = 1 min
t=1s
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C, R
GS
= 1MW
Continuous
Transient
T
C
= 25擄C
Terminal (current limit)
T
C
= 25擄C; Note 1
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
Maximum Ratings
150
150
鹵20
鹵30
150
100
600
150
60
3
5
600
-55 ... +150
150
-55 ... +150
300
2500
3000
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
V~
V~
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
路
International standard package
路
Encapsulating epoxy meets
UL 94 V-0, flammability classification
路
miniBLOC with Aluminium nitride
路
路
路
路
路
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
路
路
路
路
Symbol
Test Conditions
(T
J
= 25擄C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
鹵20V,
V
GS
= 0V
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10V, I
D
= 0.5 鈥?I
Note 2
Min.
150
2
Characteristic Values
Typ. Max.
V
4
鹵100
V
nA
mA
mA
mW
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
路
DC choppers
路
Temperature and lighting controls
路
Low voltage relays
Advantages
路
Easy to mount
路
Space savings
路
High power density
T
J
= 25擄C
T
J
= 125擄C
100
2
12.5
IXYS reserves the right to change limits, test conditions, and dimensions.
98653 (9/99)
漏 2000 IXYS All rights reserved
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