HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Preliminary data
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C,
pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
72N20
80N20
72N20
80N20
V
DSS
IXFK72N20
IXFK80N20
I
D25
R
DS(on)
200 V 72 A 35 mW
200 V 80 A 30 mW
t
rr
攏
200 ns
Maximum Ratings
200
200
鹵20
鹵30
72
80
288
320
74
45
5
360
-55 ... +150
150
-55 ... +150
300 -
0.9/6
10
V
V
V
V
A
A
A
A
A
mJ
V/ns
W
擄C
擄C
擄C
擄C
Nm/lb.in.
g
TO-264 AA
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
鈥?International standard packages
鈥?Molding epoxies meet UL 94 V-0
flammability classification
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Fast intrinsic rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
200
2
4
鹵100
T
J
= 25擄C
T
J
= 125擄C
200
1
35
30
V
V
nA
mA
mA
mW
mW
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
鈥?DC choppers
鈥?Temperature and lighting controls
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= 10 V,I
D
= 0.5 鈥?I
D25
Advantages
鈥?Easy to mount
鈥?Space savings
鈥?High power density
72N20
80N20
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
97523C (07/00)
漏 2000 IXYS All rights reserved
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