HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Preliminary data sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
IXFH 80N15Q
IXFK 80N15Q
IXFT 80N15Q
V
DSS
I
D25
R
DS(on)
t
rr
= 150
V
= 80
A
= 22.5
mW
攏
200
ns
Maximum Ratings
150
150
鹵20
鹵30
80
320
80
45
1.5
5
360
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
(TAB)
TO-264 AA (IXFK)
G
D
S
D (TAB)
TO-247
TO-264
TO-247
TO-264
TO-268
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6
10
4
g
g
g
G = Gate
S = Source
TAB = Drain
Features
l
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
150
2.0
4.0
鹵100
T
J
= 25擄C
T
J
= 125擄C
25
1
V
V
nA
mA
mA
l
l
l
l
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250 uA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
Low gate charge
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
l
l
l
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
22.5 m
W
Easy to mount
Space savings
High power density
漏 2000 IXYS All rights reserved
98725 (05/31/00)
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