HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
V
DSS
IXFK33N50
IXFK35N50
I
D25
R
DS(on)
500 V 33 A 0.16
W
500 V 35 A 0.15
W
t
rr
攏
250 ns
Preliminary data
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AS
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Symbol
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C,
pulse width limited by T
JM
T
C
= 25擄C
I
D
= 32 A
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
33N50
35N50
33N50
35N50
33N50
35N50
Maximum Ratings
500
500
鹵20
鹵30
33
35
132
140
30
35
2.5
45
5
416
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
J
mJ
V/ns
W
擄C
擄C
擄C
擄C
Nm/lb.in.
g
TO-264 AA
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
路
International standard packages
路
Molding epoxies meet UL 94 V-0
flammability classification
路
Low R
DS (on)
HDMOS
TM
process
路
Unclamped Inductive Switching (UIS)
rated
路
Fast intrinsic rectifier
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
0.9/6
10
Applications
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min.
typ.
max.
500
0.102
2
-0.206
鹵200
T
J
= 25擄C
T
J
= 125擄C
200
2
0.16
0.15
4
V
%/K
V
%/K
nA
mA
mA
W
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DSS
temperature coefficient
V
DS
= V
GS
, I
D
= 4 mA
V
GS(th)
temperature coefficient
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 16.5A
路
路
路
路
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
路
DC choppers
路
Temperature and lighting controls
Advantages
33N50
35N50
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
路
Easy to mount
路
Space savings
路
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
97517D (07/00)
漏 2000 IXYS All rights reserved
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