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IXFK25N80 Datasheet

  • IXFK25N80

  • HiPerFETTM Power MOSFETs

  • 4頁(yè)

  • IXYS   IXYS

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Not for New Designs
V
DSS
I
D25
27 A
25 A
27 A
25 A
R
DS(on)
0.30
0.35
0.30
0.35
鈩?/div>
鈩?/div>
鈩?/div>
鈩?/div>
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
IXFK
IXFK
IXFN
IXFN
27N80
25N80
27N80
25N80
800
800
800
800
V
V
V
V
TO-264 AA (IXFK)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
Symbol
Test Conditions
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
ISOL
鈮?/div>
1 mA
t = 1 min
t=1s
300
-
-
0.9/6
-
10
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
,
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C, Chip capability
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
Maximum Ratings
IXFK
IXFN
800
800
鹵20
鹵30
27N80 27
25N80 25
27N80 108
25N80 100
27N80 14
25N80 13
30
5
500
800
800
鹵20
鹵30
27
25
108
100
14
13
30
5
520
150
-55 ... +150
-
2500
3000
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
W
擄C
擄C
擄C
擄C
V~
V~
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
G
D
S
(TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
D
G
S
G
S
S
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
-55 ... +150
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min.
typ.
max.
800
0.096
2
-0.214
鹵200
T
J
= 25擄C
T
J
= 125擄C
25N80
27N80
500
2
0.35
0.30
4.5
V
%/K
V
%/K
nA
碌A(chǔ)
mA
鈩?/div>
鈩?/div>
鈥?/div>
鈥?/div>
International standard packages
JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
miniBLOC, with Aluminium nitride
isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DSS
temperature coefficient
V
DS
= V
GS
, I
D
= 8 mA
V
GS(th)
temperature coefficient
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
鈥?/div>
鈥?/div>
鈥?/div>
Easy to mount
Space savings
High power density
漏 2002 IXYS All rights reserved
95561D(6/02)

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