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IXFK24N100 Datasheet

  • IXFK24N100

  • HiPerRF Power MOSFETs

  • 2頁(yè)

  • IXYS   IXYS

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Advance Technical Information
HiPerRF
TM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
, Low Intrinsic R
g
High dV/dt,
Low t
rr
IXFX 24N100F V
DSS
= 1000 V
IXFK 24N100F I
D25
=
24 A
R
DS(on)
= 0.39
鈩?/div>
t
rr
鈮?/div>
250 ns
PLUS 247
TM
(IXFX)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
PLUS 247
TO-264
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
Maximum Ratings
1000
1000
鹵20
鹵30
24
96
24
60
3.0
10
560
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
l
G
(TAB)
D
TO-264 AA (IXFK)
G
D
S
(TAB)
G = Gate
S = Source
Features
l
l
D = Drain
TAB = Drain
l
0.4/6 Nm/lb.in.
6
10
g
g
l
RF capable MOSFETs
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1000
3.0
V
5.5 V
鹵200
nA
T
J
= 25擄C
T
J
= 125擄C
100
碌A(chǔ)
3 mA
0.39
鈩?/div>
l
l
l
l
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
l
l
l
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
漏 2002 IXYS All rights reserved
98874 (1/02)

IXFK24N100 產(chǎn)品屬性

  • 25

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 1000V（1kV）

  • 24A

  • 390 毫歐 @ 12A，10V

  • 5.5V @ 8mA

  • 267nC @ 10V

  • 8700pF @ 25V

  • 560W

  • 通孔

  • TO-264-3，TO-264AA

  • TO-264

  • 管件

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