Advanced Technical Information
HiPerFET
TM
Power MOSFETs
Single MOSFET Die
IXFK 180N07
IXFX 180N07
V
DSS
I
D25
R
DS(on)
=
70 V
= 180 A
=
6 mW
t
rr
攏
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C (MOSFET chip capability)
External lead (current limit)
T
C
= 25擄C, Note 1
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
Maximum Ratings
70
70
鹵20
鹵30
180
76
720
180
60
3
5
560
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
Nm/lb.in.
6
10
g
g
PLUS 247
TM
G
D (TAB)
D
TO-264 AA (IXFK)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
PLUS 247
TO-264
0.9/6
300
Features
鈥?International standard packages
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Low package inductance
- easy to drive and to protect
鈥?Fast intrinsic rectifier
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
70
2.0
V
4.0 V
鹵100
nA
T
J
= 25擄C
T
J
= 125擄C
100
mA
2 mA
6 mW
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Note 1
Applications
鈥?DC-DC converters
鈥?Synchronous rectification
鈥?Battery chargers
鈥?Switched-mode and resonant-mode
power supplies
鈥?DC choppers
鈥?Temperature and lighting controls
鈥?Low voltage relays
Advantages
鈥?PLUS 247
TM
package for clip or spring
mounting
鈥?Space savings
鈥?High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
98556B (6/99)
漏 2000 IXYS All rights reserved
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