HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated
High dv/dt, Low t
rr
, HDMOS
TM
Family
Preliminary data sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
As
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
1.6 mm (0.062 in.) from case for 10 s
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
IXFJ 32N50Q
V
DSS
I
D(cont)
R
DS(on)
t
rr
= 500
= 32
= 0.15
< 250
V
A
W
ns
Maximum Ratings
500
500
鹵20
鹵30
32
128
32
1.5
45
5
360
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
J
mJ
V/ns
W
擄C
擄C
擄C
擄C
Features
鈥?Low profile, high power package
鈥?Long creep and strike distances
鈥?Easy up-grade path for TO-220
designs
鈥?Low R
DS (on)
low Qg process
鈥?Rugged polysilicon gate cell structure
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Low package inductance
- easy to drive and to protect
鈥?Fast intrinsic Rectifier
Applications
G = Gate,
S = Source,
D = Drain,
TAB = Drain
G
D
S
茅
(TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
500
2
4
鹵100
T
J
= 25擄C
T
J
= 125擄C
100
1
0.15
V
V
nA
mA
mA
W
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
鈥?High power, low profile package
鈥?Space savings
鈥?High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98579B (5/31/00)
漏 2000 IXYS All rights reserved
1-4
IXFJ32N50Q 產(chǎn)品屬性
30
分離式半導(dǎo)體產(chǎn)品
FET - 單
HiPerFET™
MOSFET N 通道，金屬氧化物
標(biāo)準(zhǔn)型
500V
32A
150 毫歐 @ 16A，10V
4V @ 4mA
153nC @ 10V
3950pF @ 25V
360W
通孔
TO-220-3（SMT）標(biāo)片
TO-220
管件
IXFJ32N50Q相關(guān)型號(hào)PDF文件下載
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