音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

IXFJ13N50 Datasheet

  • IXFJ13N50

  • HiPerFET Power MOSFETs

  • 4頁

  • IXYS   IXYS

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
IXFJ 13N50
V
DSS
I
D (cont)
R
DS(on)
t
rr
= 500
= 13
= 0.4
250
V
A
W
ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
I
DM
, di/dt
100 A/ms, V
DD
V
DSS
,
T
J
150擄C, R
G
= 2
W
T
C
= 25擄C
Maximum Ratings
500
500
鹵20
鹵30
13
52
13
18
5
180
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
擄C
擄C
擄C
擄C
g
Features
鈥?Low profile, high power package
鈥?Long creep and strike distances
鈥?Easy up-grade path for TO-220
designs
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Unclamped Inductive Switching (UIS)
rated
鈥?Low package inductance
- easy to drive and to protect
鈥?Fast intrinsic Rectifier
Applications
G = Gate,
S = Source,
D = Drain,
TAB = Drain
G
D
S
(TAB)
1.6 mm (0.062 in.) from case for 10 s
300
5
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
500
2
4
鹵100
T
J
= 25擄C
T
J
= 125擄C
200
1
0.4
V
V
nA
mA
mA
W
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 2.5 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
鈥?High power, low profile package
鈥?Space savings
鈥?High power density
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
300
ms,
duty cycle d
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98578 (2/99)
漏 2000 IXYS All rights reserved
1-4

IXFJ13N50 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HiPerFET™

  • MOSFET N 通道,金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 500V

  • 13A

  • 400 毫歐 @ 6.5A,10V

  • 4V @ 2.5mA

  • 120nC @ 10V

  • 2800pF @ 25V

  • 180W

  • 通孔

  • TO-220-3(SMT)標(biāo)片

  • TO-220

  • 管件

IXFJ13N50相關(guān)型號PDF文件下載

您可能感興趣的PDF文件資料

掃碼下載APP,
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù):
賣家服務(wù):
技術(shù)客服:

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號,
第一時間獲取資訊。

建議反饋

聯(lián)系人:

聯(lián)系方式:

按住滑塊,拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見,您的參與是維庫提升服務(wù)的動力!意見一經(jīng)采納,將有感恩紅包奉上哦!