HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Preliminary data sheet
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
IXFH 80N20Q
IXFK 80N20Q
IXFT 80N20Q
V
DSS
I
D25
R
DS(on)
t
rr
= 200 V
= 80 A
= 28 mW
攏
200 ns
Maximum Ratings
200
200
鹵20
鹵30
80
320
80
45
1.5
5
360
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
TO-264 AA (IXFK)
(TAB)
G
D
S
D (TAB)
TAB = Drain
TO-247
TO-264
TO-247
TO-264
TO-268
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6
10
4
g
g
g
G = Gate
S = Source
Features
鈥?Low gate charge
鈥?International standard packages
鈥?Epoxy meet UL 94 V-0, flammability
classification
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Avalanche energy and current rated
鈥?Fast intrinsic Rectifier
Advantages
鈥?Easy to mount
鈥?Space savings
鈥?High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
200
2.0
4.0
鹵100
T
J
= 25擄C
T
J
= 125擄C
25
1
V
V
nA
mA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250 uA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
28 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
98605A (6/99)
漏 2000 IXYS All rights reserved
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