HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary data sheet
IXFH 80N085
IXFT 80N085
V
DSS
= 85 V
= 80 A
I
D25
R
DS(on)
= 9 mW
t
rr
攏
200 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
Lead current limit
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
Maximum Ratings
85
85
鹵20
鹵30
80
75
320
80
50
2.5
5
300
-55 to +150
150
-55 to +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
Nm/lb.in.
g
g
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
S
(TAB)
G = Gate
D
= Drain
S = Source TAB = Drain
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
300
1.13/10
6
4
Features
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min.
typ.
max.
85
2.0
4.0
鹵100
T
J
= 25擄C
T
J
= 125擄C
50
1
9
V
V
nA
mA
mA
mW
Advantages
鈥?Easy to mount
鈥?Space savings
鈥?High power density
鈥?International standard packages
鈥?Low R
DS (on)
鈥?Rated for unclamped Inductive load
switching (UIS)
鈥?Molding epoxies meet UL 94 V-0
flammability classification
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98709 (03/24/00)
漏 2000 IXYS All rights reserved
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