鈩?/div>
T
C
= 25擄C
Maximum Ratings
(TAB)
200
200
鹵20
鹵30
60
240
60
35
1.5
10
315
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄
C
擄
C
擄
C
擄
C
G = Gate,
S = Source,
TO-268 (IXFT) Case Style
G
S
D = Drain,
TAB = Drain
(TAB)
Features
l
l
l
1.13/10 Nm/lb.in.
6
4
g
g
l
l
RF capable MOSFETs
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
200
2.0
V
4.0 V
鹵100
nA
50
碌A
1.5 mA
38 m鈩?/div>
l
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
鹵20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 125擄C
l
l
l
l
l
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
13.5 MHz industrial applications
Pulse generation
Laser drivers
RF amplifiers
Advantages
l
l
Space savings
High power density
漏 2002 IXYS All rights reserved
98885 (1/02)
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