HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Low Gate Charge and Capacitances
Preliminary data
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C, Chip capability
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
IXFH 52N30Q
IXFK 52N30Q
IXFT 52N30Q
V
DSS
I
D25
R
DS(on)
t
rr
= 300 V
= 52 A
= 60 mW
攏
250 ns
Maximum Ratings
300
300
鹵20
鹵30
52
208
52
30
1.5
5
360
-55 ... +150
150
-55 ... +150
300
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
(TAB)
TO-264 AA (IXFK)
TO-247
TO-264
TO-247
TO-264
TO-268
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6
10
4
g
g
g
G = Gate
S = Source
G
D
S
D (TAB)
TAB = Drain
Features
鈥?Low gate charge
鈥?International standard packages
鈥?Epoxy meet UL 94 V-0, flammability
classification
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell structure
鈥?Avalanche energy and current rated
鈥?Fast intrinsic Rectifier
Advantages
鈥?Easy to mount
鈥?Space savings
鈥?High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
300
2
4
鹵200
T
J
= 25擄C
T
J
= 125擄C
50
1
V
V
nA
mA
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
60 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
98522B (7/00)
漏 2000 IXYS All rights reserved
1-2
IXYS
1
2
