HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
IXFH14N80
IXFH15N80
I
D25
R
DS(on)
0.70
W
0.60
W
800 V 14 A
800 V 15 A
t
rr
攏
250 ns
Preliminary data
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
Maximum Ratings
800
800
鹵20
鹵30
14N80
15N80
14N80
15N80
14N80
15N80
14
15
56
60
14
15
30
5
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
TO-247 AD
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
300
-55 ... +150
150
-55 ... +150
W
擄C
擄C
擄C
擄C
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
鈥?/div>
Low package inductance
- easy to drive and to protect
鈥?/div>
Fast intrinsic Rectifier
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10 Nm/lb.in.
6
g
Applications
Symbol
Test Conditions
(T
J
= 25擄C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DSS
temperature coefficient
V
DS
= V
GS
, I
D
= 4 mA
V
GS(th)
temperature coefficient
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
T
J
= 25擄C
T
J
= 125擄C
Characteristic Values
Min. Typ.
Max.
800
0.096
2.0
-0.214
鹵100
250
1
0.70
0.60
4.5
V
%/K
V
%/K
nA
mA
mA
W
W
Advantages
鈥?/div>
Easy to mount with 1 screw
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
14N80
15N80
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
(isolated mounting screw hole)
鈥?/div>
Space savings
鈥?/div>
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
96523B (3/98)
漏 2000 IXYS All rights reserved
1-4
IXFH15N80 產(chǎn)品屬性
30
分離式半導(dǎo)體產(chǎn)品
FET - 單
HiPerFET™
MOSFET N 通道，金屬氧化物
標(biāo)準(zhǔn)型
800V
15A
600 毫歐 @ 7.5A，10V
4.5V @ 4mA
200nC @ 10V
4870pF @ 25V
300W
通孔
TO-247-3
TO-247AD
管件
IXFH15N80相關(guān)型號PDF文件下載
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