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IXFH15N80Q Datasheet

  • IXFH15N80Q

  • HiPerFET Power MOSFETs Q-Class

  • 4頁

  • IXYS   IXYS

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HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
IXFH 15N80Q
IXFT 15N80Q
V
DSS
I
D25
R
DS(on)
=
=
=
800 V
15 A
0.60
W
t
rr
攏
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
Maximum Ratings
800
800
鹵20
鹵30
15
60
15
30
1.0
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) (IXFT) Case Style
G
W
擄C
擄C
擄C
擄C
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
G = Gate
S = Source
S
D = Drain
TAB = Drain
(TAB)
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
300
1.13/10 Nm/lb.in.
6
4
g
g
Symbol
Test Conditions
(T
J
= 25擄C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25擄C
T
J
= 125擄C
Characteristic Values
Min. Typ.
Max.
800
2.0
4.5
鹵100
25
1
0.60
V
V
nA
mA
mA
W
IXYS advanced low Q
g
process
International standard packages
Low R
DS (on)
Unclamped Inductive Switching (UIS)
rated
鈥?Fast switching
鈥?Molding epoxies meet UL 94 V-0
flammability classification
Advantages
鈥?Easy to mount
鈥?Space savings
鈥?High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
98514B (7/00)
漏 2000 IXYS All rights reserved
1-4

IXFH15N80Q 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 800V

  • 15A

  • 600 毫歐 @ 7.5A，10V

  • 4.5V @ 4mA

  • 90nC @ 10V

  • 4300pF @ 25V

  • 300W

  • 通孔

  • TO-247-3

  • TO-247AD

  • 管件

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