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IXFH10N100 Datasheet

  • IXFH10N100

  • HiPerFET Power MOSFETs

  • 4頁(yè)

  • IXYS   IXYS

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HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
IXFH/IXFM 10 N100
IXFH/IXFM 12 N100
IXFH 13 N100
I
D25
R
DS(on)
1000 V 10 A 1.20
W
1000 V 12 A 1.05
W
1000 V 12.5 A 0.90
W
t
rr
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
10N100
12N100
13N100
10N100
12N100
13N100
10N100
12N100
13N100
Maximum Ratings
1000
1000
鹵20
鹵30
10
12
12.5
40
48
50
10
12
12.5
30
5
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
A
A
A
mJ
V/ns
W
擄C
擄C
擄C
擄C
TO-247 AD (IXFH)
TO-204 AA (IXFM)
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25擄C
I
S
I
DM
, di/dt
100 A/ms, V
DD
V
DSS
,
T
J
150擄C, R
G
= 2
W
T
C
= 25擄C
D
G = Gate,
S = Source,
G
D = Drain,
TAB = Drain
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Features
q
International standard packages
q
Low R
DS (on)
HDMOS
TM
process
q
Rugged polysilicon gate cell structure
q
Unclamped Inductive Switching (UIS)
rated
q
Low package inductance
- easy to drive and to protect
q
Fast intrinsic Rectifier
Applications
q
DC-DC converters
q
Synchronous rectification
q
Battery chargers
q
Switched-mode and resonant-mode
power supplies
q
DC choppers
q
AC motor control
q
Temperature and lighting controls
q
Low voltage relays
Advantages
q
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
q
Space savings
q
High power density
91531F(4/99)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1000
2.0
4.5
鹵100
T
J
= 25擄C
T
J
= 125擄C
250
1
1.20
1.05
0.90
V
V
nA
mA
mA
W
W
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
10N100
12N100
13N100
Pulse test, t
300
ms,
duty cycle d
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
漏 2000 IXYS All rights reserved
1-4

IXFH10N100 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HiPerFET™

  • MOSFET N 通道,金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 1000V(1kV)

  • 10A

  • 1.2 歐姆 @ 5A,10V

  • 4.5V @ 4mA

  • 155nC @ 10V

  • 4000pF @ 25V

  • 300W

  • 通孔

  • TO-247-3

  • TO-247

  • 管件

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