Advanced Technical Information
HiPerFET
TM
IXFF 24N100
I
D25
= 22 A
V
DSS
= 1000 V
Power Mosfet
R
DSon
= 390 mW
i
n High Voltage ISOPLUS I4-PAC
TM
1
5
MOSFETs
Symbol
V
DSS
V
GS
I
D25
I
D90
I
F25
I
F90
dv/dt
E
AR
Symbol
T
C
= 25擄C
T
C
= 90擄C
(diode) T
C
= 25擄C
(diode) T
C
= 90擄C
V
DS
< V
DSS
; I
F
攏
100A;么di
F
/dt么攏 100A/碌s; R
G
= 2
W
T
VJ
= 150擄C
T
C
= 25擄C
Conditions
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
1000
鹵20
22
15
120
75
5
64
V
V
A
A
A
A
V/ns
mJ
Features
鈥?HiPerFET
TM
technology
- low R
DSon
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
鈥?ISOPLUS I4-PAC
TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
390 mW
2.5
0.25
5
V
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
t
rr
R
thJC
V
GS
= 10 V; I
D
= I
D90
V
DS
= 20 V; I
D
= 8 mA;
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
250
55
135
35
35
75
21
(diode) I
F
= 12 A; V
GS
= 0 V
(diode) I
F
= 24 A; -di/dt = 100 A/碌s; V
DS
= 100 V
250
Applications
鈥?switched mode power supplies
鈥?DC-DC converters
鈥?resonant converters
0.1 mA
mA
200
nA
nC
nC
nC
ns
ns
ns
ns
1.5
V
ns
0.32 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
022
漏 2000 IXYS All rights reserved
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