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IXFC80N10 Datasheet

  • IXFC80N10

  • HiPerFETTM MOSFET ISOPLUS220

  • 2頁(yè)

  • IXYS   IXYS

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ADVANCE TECHNICAL INFORMATION
HiPerFET
TM
MOSFET
ISOPLUS220
TM
Electrically Isolated Back Surface
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
IXFC 80N10
V
DSS
I
D25
R
DS(on)
t
rr
= 100 V
= 80 A
= 12.5 m鈩?/div>
鈩?/div>
鈮?/div>
200 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
F
C
V
ISOL
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
Lead current limit
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
,
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
Maximum Ratings
100
100
鹵20
鹵30
80
55
320
80
50
2.5
5
230
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄
C
ISOPLUS 220
TM
G
D
S
G = Gate,
S = Source
* Patent pending
Isolated back surface*
D = Drain,
Features
l
l
l
l
l
1.6 mm (0.062 in.) from case for 10 s
Mounting force
50/60 Hz, RMS, leads-to-tab
300
11..65/2.4..11 Nm/lb
2500
2
V~
g
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R
DS (on)
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsicRectifier
Applications
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
100
2.0
4.0
鹵100
T
J
= 25擄C
T
J
= 125擄C
V
V
l
l
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
碌A(chǔ)
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 1, 2
l
DC-DC converters
Batterychargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
nA
l
l
l
50
碌A(chǔ)
1 mA
12.5 m鈩?/div>
l
Easy assembly: no screws or isolation
foils required
Space savings
High power density
Low collector capacitance to ground
(low EMI)
98852 (8/01)
漏 2001 IXYS All rights reserved

IXFC80N10 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 100V

  • 80A

  • 12.5 毫歐 @ 40A，10V

  • 4V @ 4mA

  • 180nC @ 10V

  • 4800pF @ 25V

  • 230W

  • 通孔

  • ISOPLUS220?

  • ISOPLUS220?

  • 管件

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