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IXFC15N80Q Datasheet

  • IXFC15N80Q

  • HiPerFET ISOPLUS 220 MOSFET Q-Class Electrically Isolated Ba...

  • 2頁

  • IXYS   IXYS

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IXFC 15N80Q
HiPerFET
TM
ISOPLUS 220
TM
MOSFET
Q-Class
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
V
DSS
I
D25
R
DS(on)
= 800 V
=
13 A
= 0.65
鈩?/div>
t
rr
鈮?/div>
250 ns
ISOPLUS220
TM
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS t = 1 min leads to tab
mounting force with clip
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
,
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
230
-40 ... +150
150
-40 ... +150
300
2500
11...65 / 2.5...15
2
W
擄
C
擄
C
擄
C
擄
C
V
N/lb
g
Maximum Ratings
800
800
鹵20
鹵30
13
60
15
30
1.0
10
V
V
V
V
A
A
A
mJ
J
V/ns
G = Gate
S = Source
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<35pF)
Low R
DS (on)
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly: no screws or isolation
foils required
Space savings
High power density
G
D
S
Isolated back surface*
D = Drain
Symbol
Test Conditions
(T
J
= 25擄C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25擄C
T
J
= 125擄C
Characteristic Values
Min. Typ.
Max.
800
2.0
4.5
鹵100
25
1
0.65
V
V
nA
碌A(chǔ)
mA
鈩?/div>
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
See IXFH15N80Q data sheet for
characteristic curves
漏 2003 IXYS All rights reserved
DS98946B(07/03)

IXFC15N80Q 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HiPerFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 800V

  • 13A

  • 650 毫歐 @ 500mA，10V

  • 4.5V @ 4mA

  • 90nC @ 10V

  • 4300pF @ 25V

  • 230W

  • 通孔

  • ISOPLUS220?

  • ISOPLUS220?

  • 管件

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