HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, High dv/dt
Preliminary data sheet
IXFA 3N80
IXFP 3N80
V
DSS
= 800 V
I
D25
= 3.6 A
R
DS(on)
= 3.6
W
t
rr
攏
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
I
S
攏
I
DM
, di/dt
攏
100 A/ms, V
DD
攏
V
DSS
,
T
J
攏
150擄C, R
G
= 2
W
T
C
= 25擄C
Maximum Ratings
800
800
鹵20
鹵30
3.6
14.4
3.6
10
400
5
100
-55 to +150
150
-55 to +150
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
擄C
擄C
擄C
擄C
TO-220 (IXFP)
D (TAB)
G
DS
TO-263 (IXFA)
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
TO-220
TO-263
300
Features
l
l
l
1.13/10 Nm/lb.in.
4
2
g
g
International standard packages
Low R
DS (on)
Rated for unclamped Inductive load
Switching (UIS)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min.
typ.
max.
800
2.5
4.5
鹵100
T
J
= 25擄C
T
J
= 125擄C
50
1
3.6
V
V
nA
mA
mA
W
Advantages
l
l
l
Easy to mount
Space savings
High power density
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1 mA
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
攏
300
ms,
duty cycle d
攏
2 %
漏 2000 IXYS All rights reserved
98746 (09/00)