Advanced Technical Information
NPT
3
IGBT
in ISOPLUS 247
TM
IXER 60N120
I
C25
V
CES
V
CE(sat) typ.
C
G
= 95 A
= 1200 V
= 2.1 V
ISOPLUS 247
TM
E153432
G
C
E
E
G = Gate
Isolated Backside*
C = Collector
E = Emitter
*Patent pending
IGBT
Symbol
V
CES
V
GES
I
C25
I
C90
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
T
C
= 25擄C
T
C
= 90擄C
V
GE
=
鹵
15 V; R
G
= 22
鈩?
T
VJ
= 125擄C
RBSOA, Clamped inductive load; L = 100 碌H
V
CE
= 900 V; V
GE
=
鹵
15 V; R
G
= 22
鈩?
T
VJ
= 125擄C
non-repetitive
T
C
= 25擄C
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
1200
鹵
20
95
60
100
V
CES
10
375
V
V
A
A
A
碌s
W
Features
鈥?NPT
3
IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
鈥?ISOPLUS 247
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- high reliability
- industry standard outline
Applications
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
2.1
2.5
4.5
0.1
200
150
60
700
50
7.2
6.0
3.8
500
0.66
2.7
6.5
0.1
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
nC
0.33 K/W
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
I
C
= 60 A; V
GE
= 15 V; T
VJ
= 25擄C
T
VJ
= 125擄C
I
C
= 2 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
CE
= 0 V; V
GE
=
鹵
20 V
鈥?single switches
and with complementary free wheeling
diodes
鈥?choppers
鈥?phaselegs, H bridges, three phase
bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating
Inductive load, T
VJ
= 125擄C
V
CE
= 600 V; I
C
= 60 A
V
GE
= 鹵15 V; R
G
= 22
鈩?/div>
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 50 A
漏 2002 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
204
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