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IXBH42N170 Datasheet

  • IXBH42N170

  • High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Tr...

  • 582.43KB

  • 5頁

  • IXYS   IXYS

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High Voltage, High Gain
BIMOSFET
TM
Monolithic
Bipolar MOS Transistor
IXBH 42N170
IXBT 42N170
V
CES
= 1700 V
= 75 A
I
C25
V
CE(sat)
= 3.6
V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C, 1 ms
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 10
鈩?/div>
Clamped inductive load
V
GE
= 15 V, V
CES
= 1200V, T
J
= 125擄C
R
G
= 10
鈩?/div>
non repetitive
T
C
= 25擄C
Maximum Ratings
1700
1700
鹵20
鹵30
75
42
180
I
CM
=
V
CES
=
90
1350
10
360
-55 ... +150
150
-55 ... +150
350
260
6
4
V
V
V
V
A
A
A
A
V
碌s
W
擄C
擄C
擄C
擄C
擄C
g
g
TO-268 (IXBT)
G
E
(TAB)
TO-247 AD
(IXBH)
G
C (TAB)
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
d
Weight
Mounting torque (M3)
TO-247 AD
TO-268
1.13/10Nm/lb.in.
Features
High Blocking Voltage
JEDEC TO-268 surface and
JEDEC TO-247 AD
Low conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Molding epoxies meet UL 94 V-0
flammability classification
Applications
AC motor speed control
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Capacitor discharge circuits
Advantages
Lower conduction losses than MOSFETs
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1700
2.5
T
J
= 25擄C
T
J
= 125擄C
5.5
50
1.5
鹵100
3.6
T
J
= 125擄C
3.7
V
V
碌A
mA
nA
V
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
碌A,
V
GE
= 0 V
= 750
碌A,
V
CE
= V
GE
V
CE
= 0.8 V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
漏 2004 IXYS All rights reserve
DS98710B(12/04)

IXBH42N170 產品屬性

  • 30

  • 分離式半導體產品

  • IGBT - 單路

  • BIMOSFET™

  • -

  • 1700V

  • 2.8V @ 15V，42A

  • 80A

  • 360W

  • 標準型

  • 通孔

  • TO-247-3

  • TO-247AD

  • 散裝

  • Q1157068

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