High Voltage BIMOSFET
TM
Monolithic Bipolar
MOS Transistor
N-Channel, Enhancement Mode
IXBH 20N140
IXBH 20N160
V
CES
I
C25
V
CE(sat)
t
fi
TO-247 AD
=
=
=
=
1400/1600 V
20 A
4.7 V
typ.
40 ns
C
G
G
C
E
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
C (TAB)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
M
d
Weight
Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25擄C,
T
C
= 90擄C
T
C
= 25擄C, 1 ms
Maximum Ratings
20N140
20N160
1400
1400
1600
1600
鹵20
鹵30
20
13
26
I
CM
= 24
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
擄C
擄C
擄C
擄C
Features
鈥?International standard package
JEDEC TO-247 AD
鈥?High Voltage BIMOSFET
TM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective R
DS(on)
鈥?Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
鈥?MOS Gate turn-on
- drive simplicity
鈥?Reverse conducting capability
V
GE
= 15 V, T
VJ
= 125擄C, R
G
= 27
W
V
CE
= 0.8鈥
CES
Clamped inductive load, L = 100
mH
T
C
= 25擄C
Applications
Flyback converters
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
鈥?CRT deflection
鈥?Lamp ballasts
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300
1.15/10 Nm/lb.in.
6
g
Symbol
Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
20N140
20N160
1400
1600
4
T
J
= 25擄C
T
J
= 125擄C
8
300
1
鹵
500
T
J
= 125擄C
4.7
5.4
6.5
V
V
V
mA
mA
nA
V
V
Advantages
鈥?Easy to mount with 1 screw
(isolated mounting screw hole)
鈥?Space savings
鈥?High power density
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 1 mA, V
GE
= 0 V
= 1.5 mA, V
CE
= V
GE
V
CE
= 0.8 鈥?V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
鹵20
V
I
C
= I
C90
, V
GE
= 15 V
漏 2000 IXYS All rights reserved
1-4
031
IXYS
1
2
3
4
