Advanced Technical Information
High Voltage
BIMOSFET
TM
in High Voltage
ISOPLUS i4-PAC
TM
Monolithic Bipolar MOS Transistor
IXBF 9N140
I
C25
IXBF 9N160
V
CES
V
CE(sat)
t
f
=
=
=
=
7A
1400/1600 V
4.9V
40 ns
1
5
IGBT
Symbol
V
CES
V
GES
I
C25
I
C90
I
CM
V
CEK
P
tot
T
C
= 25擄C
T
C
= 90擄C
V
GE
= 15/0 V; R
G
= 100
W;
T
VJ
= 125擄C
RBSOA, Clamped inductive load; L = 100 碌H
T
C
= 25擄C
Conditions
T
VJ
= 25擄C to 150擄C
IXBF 9N140
IXBF 9N160
Maximum Ratings
1400
1600
鹵
20
7
4
12
0.8V
CES
70
W
V
V
V
A
A
A
Features
鈥?High Voltage BIMOSFET
TM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- fast switching for high frequency
operation
- reverse conduction capability
鈥?ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
4.9
5.6
4
0.1
500
200
60
180
40
550
44
3.6
7
8
0.1
V
V
V
mA
mA
nA
ns
ns
ns
ns
pF
nC
V
1.75 K/W
Applications
鈥?switched mode power supplies
鈥?DC-DC converters
鈥?resonant converters
鈥?lamp ballasts
鈥?laser generators, x ray generators
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
C
ies
Q
Gon
V
F
R
thJC
I
C
= 5 A; V
GE
= 15 V; T
VJ
= 25擄C
T
VJ
= 125擄C
I
C
= 0.5 mA; V
GE
= V
CE
V
CE
= 0.8V
CES
; V
GE
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
CE
= 0 V; V
GE
=
鹵
20 V
Inductive load, T
VJ
= 125擄C
V
CE
= 960 V; I
C
= 5 A
V
GE
= 15/0 V; R
G
= 100
W
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600V; V
GE
= 15 V; I
C
= 7 A
(reverse conduction); I
F
= 5 A
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2000 IXYS All rights reserved
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