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ITF87012SVT Datasheet

  • ITF87012SVT

  • 6A, 20V, 0.035 Ohm, N-Channel, 2.5V Specified Power MOSFET

  • 12頁(yè)

  • INTERSIL   INTERSIL

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ITF87012SVT
Data Sheet
March 2000
File Number
4810.2
6A, 20V, 0.035 Ohm, N-Channel,
2.5V Speci鏗乪d Power MOSFET
Packaging
TSOP-6
Features
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.035鈩?
V
GS
=
4.5V
- r
DS(ON)
= 0.038鈩?
V
GS
=
4.0V
- r
DS(ON)
= 0.045鈩?
V
GS
=
2.5V
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.5 V Gate Drive Capability
Small Pro鏗乴e Package
Gate to Source Protection Diode
Simulation Models
- Temperature Compensated PSPICE鈩?and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
4
1
2
3
Symbol
DRAIN(1)
DRAIN(2)
DRAIN(6)
鈥?Peak Current vs Pulse Width Curve
鈥?Transient Thermal Impedance Curve vs Board Mounting
Area
鈥?Switching Time vs R
GS
Curves
DRAIN(5)
Ordering Information
GATE(3)
SOURCE(4)
PART NUMBER
ITF87012SVT
PACKAGE
TSOP-6 (SC-95)
012
BRAND
NOTE: When ordering, use the entire part number. ITF87012SVT is
available only in tape and reel.
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
ITF87012SVT
20
20
鹵12
6.0
5.5
3.5
3.0
Figure 4
2
16
-55 to 150
300
260
UNITS
V
V
V
A
A
A
A
A
W
mW/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 4.5V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 25
o
C, V
GS
= 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 2.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 62.5
o
C/W measured using FR-4 board with 0.40 in
2
(258.1 mm
2
) copper pad at 2 second.
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci鏗乧ation is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
SABER漏 is a Copyright of Analogy Inc., PSPICE廬 is a registered trademark of MicroSim Corporation.
www.intersil.com or 321-724-7143
|
Copyright
漏
Intersil Corporation 2000

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