ITF86182SK8T
Data Sheet
January 2000
File Number
4797.2
11A, 30V, 0.0115 Ohm, P-Channel, Logic
Level, Power MOSFET
Features
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.0115鈩?
V
GS
= 鈭?0V
- r
DS(ON)
= 0.016鈩?
V
GS
= 鈭?.5V
- r
DS(ON)
= 0.0175鈩?
V
GS
= 鈭?V
[ /Title
Packaging
(ITF86
SO8 (JEDEC MS-012AA)
182SK
BRANDING DASH
8T)
鈥?Gate to Source Protection Diode
/Sub-
鈥?Simulation Models
ject
- Temperature Compensated PSPICE鈩?and SABER
5
(11A,
Electrical Models
30V,
- Spice and SABER Thermal Impedance Models
1
2
- www.intersil.com
0.0115
3
4
Ohm,
鈥?Peak Current vs Pulse Width Curve
P-
鈥?Transient Thermal Impedance Curve vs Board Mounting
Chan-
Area
Symbol
nel,
鈥?Switching Time vs R
GS
Curves
Logic
SOURCE(1)
DRAIN(8)
Level,
Ordering Information
Power
SOURCE(2)
DRAIN(7)
PART NUMBER
PACKAGE
BRAND
MOS-
ITF86182SK8T
SO8
86182
FET)
NOTE: When ordering, use the entire part number. ITF86182SK8T
SOURCE(3)
DRAIN(6)
/Author
is available only in tape and reel.
DRAIN(5)
()
GATE(4)
/Key-
words
(Inter-
ITF86182SK8T
UNITS
sil,
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
-30
V
Semi-
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-30
V
conduc-
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
鹵20
V
tor, P-
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
-11.0
A
Chan-
o
C, V
Continuous (T
A
= 25
-9.0
A
GS
= 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
nel,
Continuous (T
A
= 100
o
C, V
GS
= 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
-6.0
A
o
C, V
Logic
Continuous (T
A
= 100
-6.0
A
GS
= 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Figure 4
Level
2.5
W
Power
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20
mW/
o
C
MOS-
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
FET,
Maximum Temperature for Soldering
o
C
SO8)
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
300
Package Body for 10s, See Tech brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
260
o
C
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci鏗乧ation is not implied.
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 50
o
C/W measured using FR-4 board with 0.76 in
2
(490.3 mm
2
) copper pad at 10 second.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
SABER漏 is a Copyright of Analogy Inc.http://www.intersil.com or 321-727-9207
|
Copyright
漏
Intersil Corporation 2000
INTERSIL
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