ITF86172SK8T
Data Sheet
January 2000
File Number
4809.1
10A, 30V, 0.016 Ohm, P-Channel, Logic
Level, Power MOSFET
Features
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.016鈩?
V
GS
= 鈭?0V
- r
DS(ON)
= 0.023鈩?
V
GS
= 鈭?.5V
- r
DS(ON)
= 0.026鈩?
V
GS
= 鈭?V
鈥?Gate to Source Protection Diode
鈥?Simulation Models
- Temperature Compensated PSPICE鈩?and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
[ /Title
Packaging
(HUF7
SO8 (JEDEC MS-012AA)
6400S
BRANDING DASH
K8)
/Sub-
ject
5
(60V,
1
0.072
2
3
Ohm,
4
鈥?Peak Current vs Pulse Width Curve
4A, N-
鈥?Transient Thermal Impedance Curve vs Board Mounting
Chan-
Symbol
Area
nel,
鈥?Switching Time vs R
GS
Curves
Logic
SOURCE(1)
DRAIN(8)
Level
Ordering Information
SOURCE(2)
DRAIN(7)
UltraFE
T
PART NUMBER
PACKAGE
BRAND
Power
ITF86172SK8T
SO8
86172
SOURCE(3)
DRAIN(6)
MOS-
NOTE: When ordering, use the entire part number. ITF86172SK8T
DRAIN(5)
is available only in tape and reel.
GATE(4)
FET)
/Author
()
/Key-
words
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
ITF86172SK8T
UNITS
(Inter-
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
-30
V
sil
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
-30
V
Semi-
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
鹵20
V
conduc-
Drain Current
tor, N-
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
10.0
A
Continuous (T
A
= 25
o
C, V
GS
= 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
8.0
A
Chan-
o
C, V
Continuous (T
A
= 100
5.0
A
GS
= 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
nel,
Continuous (T
A
= 100
o
C, V
GS
= 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
5.0
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Figure 4
Logic
2.5
W
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Level
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20
mW/
o
C
UltraFE
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
o
C
-55 to 150
J STG
T
Maximum Temperature for Soldering
o
C
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
300
Power
o
Package Body for 10s, See Tech brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
260
C
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci鏗乧ation is not implied.
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 50
o
C/W measured using FR-4 board with 0.76 in
2
(490.3 mm
2
) copper pad at 10 second.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
SABER漏 is a Copyright of Analogy Inc.http://www.intersil.com or 321-727-9207
|
Copyright
漏
Intersil Corporation 1999
INTERSIL
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