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ITF86116SQT2 Datasheet

  • ITF86116SQT2

  • TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 9A I(D) | T...

  • 12頁(yè)

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ITF86116SQT
TM
Data Sheet
July 2000
File Number
4808.3
10A, 30V, 0.012 Ohm, N-Channel, Logic
Level, Power MOSFET
Packaging
TSSOP8
Features
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.012鈩?
V
GS
=
10V
- r
DS(ON)
= 0.016鈩?
V
GS
=
4.5V
鈥?Gate to Source Protection Diode
鈥?Simulation Models
- Temperature Compensated PSPICE廬 and SABER鈩?/div>
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
鈥?Peak Current vs Pulse Width Curve
鈥?Transient Thermal Impedance Curve vs Board Mounting
Area
5
1
23
4
Symbol
DRAIN(1)
SOURCE(2)
DRAIN(8)
SOURCE(7)
鈥?Switching Time vs R
GS
Curves
Ordering Information
PART NUMBER
ITF86116SQT
PACKAGE
TSSOP-8
86116
BRAND
SOURCE(3)
GATE(4)
SOURCE(6)
DRAIN(5)
NOTE: When ordering, use the entire part number. ITF86116SQT2
is available only in tape and reel.
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
ITF86116SQT
30
30
鹵20
10.0
9.0
5.0
Figure 4
2
16
-55 to 150
300
260
UNITS
V
V
V
A
A
A
A
W
mW/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 25
o
C, V
GS
= 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
A
= 100
o
C, V
GS
= 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Technical Brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 125
o
C.
2. 62.5
o
C/W measured using FR-4 board with 1.00 in
2
(645.2 mm
2
) copper pad at 10 second.
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci鏗乧ation is not implied.
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
SABER鈩?is a trademark of Analogy, Inc. PSPICE廬 is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright
漏
Intersil Corporation 2000

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