PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
TYPE: IT122/71
PH: (561)283-4500 FAX: (561)286-8914
Website:
http://www.semi -tech-inc.com
CASE OUTLINE:
TO-71
NPN SILICON DUAL DIFFERENTIAL TRANSISTOR
ABSOLUTE MAXIMUM RATING:
Collector to Base
Emitter to Base
Collector to Emitter
Collector Current
Power Dissipation TA = 25
擄C
Power Dissipation TC = 25
擄C
Storage Temperature
Operating Temperature
Lead Temperature From Case
ELECTRICAL CHARACTERISTICS TA @ 25
擄
C
PARAMETERS
SYMBOL
Collector to Collector Voltage
BVCCO
Emitter to Base Voltage
BVEBO
Collector to Emitter Voltage
Collector to Emitter Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
Saturation Voltage*
Saturation Voltage*
Base Emitter Voltage*
Base Emitter Voltage*
Base Emitter Voltage*
Current Gain at F =
Emitter Transition Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Output Capacitance
Frequency Cutoff
Transition Frequency
Notes: *Pulse Width
鈮?00usec
2% Duty Cycle
BVCEO(sus)
BVCEO
ICBO
ICBO
ICEX
ICEX
I EBO
h FE
h FE
h FE
h FE
h FE
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
VBE(on)
h FE
CTE
CC1-C2
IC1-C2
Cob
f&b
fT
I
C
=10碌A(chǔ), V
CE
=5.0V
V
EB
=0.5V
V
CC
=0
V
CC
=
鹵60V
V
CB
=5.0V
I
C
=10碌A(chǔ), V
CE
=5.0V
I
C
=1.0mA, V
CE
=5.0V
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0.7
2.5
4.0
10
2.0
I
C
=0.5mA, I
B
=0.05mA
0.5
V
EB
=5.0V
I
C
=10碌A(chǔ), V
CE
=5.0V
I
C
=1.0mA, V
CE
=5.0V
I
C
=10碌A(chǔ), V
CE
=5.0V, T
A
= -55擄C
80
100
30
1.0
BVCBO
BVEBO
BVCEO
IC
PD
PD
Tstg
TJ
TL
45
7.0
45
50
0.5 (Both Sides)
-65 to +200
-65 to +200
Vdc
Vdc
Vdc
mAdc
Watts
Watts
擄C
擄C
擄C
TEST CONDITIONS
MIN
60
45
TYP
MAX
UNIT
Vdc
Vdc
Vdc
Vdc
I
C
=1.0mA
V
CB
=45V
V
CB
=45V, T
A
=150擄C
1.0
10
nA
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
nA
-
-
-
-
-
Vdc
Vdc
Vdc
Vdc
Vdc
-
pF
pF
nA
pF
MHz
MHz
1
2
