ISL9R8120P2 / ISL9R8120S3S
May 2002
ISL9R8120P2 / ISL9R8120S3S
8A, 1200V Stealth鈩?Diode
General Description
The ISL9R8120P2 and ISL9R8120S3S are Stealth鈩?diodes
optimized for low loss performance in high frequency hard
switched applications. The Stealth鈩?family exhibits low
reverse recovery current (I
RM(REC)
) and exceptionally soft
recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
RM(REC)
and short t
a
phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth鈩?diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49413
.
Features
鈥?Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t
b
/ t
a
> 5.5
鈥?Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
rr
< 32ns
鈥?Operating Temperature . . . . . . . . . . . . . . . . . . . . 150
o
C
鈥?Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
鈥?Avalanche Energy Rated
Applications
鈥?Switch Mode Power Supplies
鈥?Hard Switched PFC Boost Diode
鈥?UPS Free Wheeling Diode
鈥?Motor Drive FWD
鈥?SMPS FWD
鈥?Snubber Diode
Package
JEDEC TO-220AC
ANODE
CATHODE
Symbol
JEDEC TO-263AB
K
CATHODE
(FLANGE)
N/C
A
ANODE
CATHODE
(BOTTOM SIDE
METAL)
Device Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
PKG
Parameter
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
= 105 C)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
o
Ratings
1200
1200
1200
8
16
100
71
20
-55 to 150
300
260
Units
V
V
V
A
A
A
W
mJ
擄C
擄C
擄C
CAUTION: Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
漏2002 Fairchild Semiconductor Corporation
ISL9R8120P2 / ISL9R8120S3S Rev. A
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