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ISL9N322AD3ST Datasheet

  • ISL9N322AD3ST

  • N-Channel Logic Level UltraFET Trench MOSFET 30V, 20A, 0.022...

  • 11頁(yè)

  • FAIRCHILD

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ISL9N322AD3ST
January 2002
PWM Optimized
ISL9N322AD3ST
N-Channel Logic Level UltraFET廬 Trench MOSFET
30V, 20A, 0.022
鈩?/div>
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
鈥?Fast switching
鈥?r
DS(ON)
= 0.018
鈩?/div>
(Typ), V
GS
= 10V
鈥?r
DS(ON)
= 0.028
鈩?/div>
(Typ), V
GS
= 4.5V
鈥?Q
g
(Typ) = 9nC, V
GS
= 5V
鈥?Q
gd
(Typ) =3nC
鈥?C
ISS
(Typ) =970pF
Applications
鈥?DC/DC converters
DRAIN (FLANGE)
D
GATE
SOURCE
G
S
TO-252
MOSFET Maximum Ratings
T
A
=25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
胃
JA
=52
o
C)
Pulsed
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
Ratings
30
鹵
20
20
20
8
Figure 4
50
0.33
-55 to 175
Units
V
V
A
A
A
A
W
W/
o
C
o
C
I
D
P
D
T
J
, T
STG
Thermal Characteristics
R
胃
JC
R
胃
JA
R
胃
JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
3
100
52
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
N322AD
Device
ISL9N322AD3ST
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500 units
漏2002 Fairchild Semiconductor Corporation
Rev.B, January 2002

ISL9N322AD3ST 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 30 V

  • +/- 20 V

  • 20 A

  • 0.022 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • TO-252AA

  • Reel

  • 28 ns, 27 ns

  • - 55 C

  • 50 W

  • 47 ns, 29 ns

  • 2500

  • 24 ns, 25 ns

ISL9N322AD3ST相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
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    Dual LDO with Low Noise, Very High PSRR, and Low IQ
    INTERSIL
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    LDO with Low ISUPPLY, High PSRR
    INTERSIL
  • 英文版
    LDO with Low ISUPPLY, High PSRR
    INTERSIL
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    High Current LDO with Low IQ and High PSRR
    INTERSIL
  • 英文版
    Dual LDO with Low Noise, Low IQ, and High PSRR
    INTERSIL
  • 英文版
    Dual LDO with Low Noise, Low IQ, and High PSRR
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    Dual LDO with Low Noise, Low IQ, and High PSRR
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    150mA Dual LDO with Low Noise, High PSRR, and Low IQ
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    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL
  • 英文版
    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL [Inter...
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    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL
  • 英文版
    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL [Inter...
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    RF PA 1.5A DC/DC Regulator
    INTERSIL [Inter...
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    Charging System Safety Circuit
    INTERSIL
  • 英文版
    Li-ion Battery Charger
    INTERSIL

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