ISL9N312AD3 / ISL9N312AD3ST
June 2002
ISL9N312AD3 / ISL9N312AD3ST
N-Channel Logic Level PWM Optimized UltraFET
廬
Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
鈥?Fast switching
鈥?r
DS(ON)
= 0.010鈩?(Typ), V
GS
= 10V
鈥?r
DS(ON)
= 0.017鈩?(Typ), V
GS
= 4.5V
鈥?Q
g
(Typ) = 13nC, V
GS
= 5V
鈥?Q
gd
(Typ) = 4.5nC
鈥?C
ISS
(Typ) = 1450pF
Applications
鈥?DC/DC converters
D
D
G
S
G
D-PAK
TO-252
(TO-252)
I-PAK
(TO-251AA)
G D S
S
MOSFET Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
=
Continuous (T
C
=
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
100
o
C,
25
o
C,
V
GS
= 4.5V)
52
o
C/W)
V
GS
= 10V, R
胃JA
=
50
32
11
Figure 4
75
0.5
-55 to 175
A
A
A
A
W
W/
o
C
o
Parameter
Ratings
30
鹵20
Units
V
V
C
Thermal Characteristics
R
胃JC
R
胃JA
R
胃JA
Thermal Resistance Junction to Case TO-251, TO-252
Thermal Resistance Junction to Ambient TO-251, TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
2
100
52
o
C/W
C/W
o
C/W
o
Package Marking and Ordering Information
Device Marking
N312AD
N312AD
Device
ISL9N312AD3ST
ISL9N312AD3
Package
TO-252AA
TO-251AA
Reel Size
330mm
Tube
Tape Width
16mm
NA
Quantity
2500 units
50 units
漏2002 Fairchild Semiconductor Corporation
ISL9N312AD3 / ISL9N312AD3ST Rev C