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ISL9N310AS3ST Datasheet

  • ISL9N310AS3ST

  • N-Channel Logic Level PWM Optimized UltraFET Trench Power MO...

  • 11頁

  • FAIRCHILD

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ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3
January 2002
ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3
N-Channel Logic Level PWM Optimized UltraFET廬 Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
鈥?Fast switching
鈥?r
DS(ON)
= 0.008
鈩?/div>
(Typ), V
GS
= 10V
鈥?r
DS(ON)
= 0.0115
鈩?/div>
(Typ), V
GS
= 4.5V
鈥?Q
g
(Typ) = 17nC, V
GS
= 5V
鈥?Q
gd
(Typ) = 5.4nC
鈥?C
ISS
(Typ) = 1800pF
SOURCE
DRAIN
GATE
D
Applications
鈥?DC/DC converters
DRAIN
(FLANGE)
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
G
DRAIN
(FLANGE)
S
TO-220AB
TO-262AA
MOSFET Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
胃
JA
= 43
o
C/W)
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
Parameter
Ratings
30
鹵
20
62
36
13.5
Figure 4
70
0.47
-55 to 175
Units
V
V
A
A
A
A
W
W/
o
C
o
C
TO-263AB
I
D
Thermal Characteristics
R
胃
JC
R
胃
JA
R
胃
JA
Thermal Resistance Junction to Case TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
2.14
62
43
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
N310AS
N310AS
N310AP
Device
ISL9N310AS3ST
ISL9N310AS3
ISL9N310AP3
Package
TO-263AB
TO-262AA
TO-220AB
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800 units
50
50
漏2002 Fairchild Semiconductor Corporation
Rev. B, January 2002

ISL9N310AS3ST 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 30 V

  • +/- 20 V

  • 62 A

  • 0.015 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • TO-263AB

  • Reel

  • 36 ns, 44 ns

  • - 55 C

  • 70 W

  • 52 ns, 38 ns

  • 800

  • 39 ns, 78 ns

ISL9N310AS3ST相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Dual LDO with Low Noise, Very High PSRR, and Low IQ
    INTERSIL
  • 英文版
    LDO with Low ISUPPLY, High PSRR
    INTERSIL
  • 英文版
    LDO with Low ISUPPLY, High PSRR
    INTERSIL
  • 英文版
    High Current LDO with Low IQ and High PSRR
    INTERSIL
  • 英文版
    Dual LDO with Low Noise, Low IQ, and High PSRR
    INTERSIL
  • 英文版
    Dual LDO with Low Noise, Low IQ, and High PSRR
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  • 英文版
    Dual LDO with Low Noise, Low IQ, and High PSRR
    INTERSIL
  • 英文版
    150mA Dual LDO with Low Noise, High PSRR, and Low IQ
    INTERSIL [...
  • 英文版
    250mA Single LDO with Low IQ, Low Noise and High PSRR LDO
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  • 英文版
    500mA 4.3MHz Low IQ High Efficiency Synchronous Buck Convert...
    INTERSIL [Inter...
  • 英文版
    600mA Low Quiescent Current 1.6MHz High Efficiency Synchrono...
    INTERSIL
  • 英文版
    600mA Low Quiescent Current 1.6MHz High Efficiency Synchrono...
    INTERSIL [Inter...
  • 英文版
    1.2A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL [Inter...
  • 英文版
    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL
  • 英文版
    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL [Inter...
  • 英文版
    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL
  • 英文版
    1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronou...
    INTERSIL [Inter...
  • 英文版
    RF PA 1.5A DC/DC Regulator
    INTERSIL [Inter...
  • 英文版
    Charging System Safety Circuit
    INTERSIL
  • 英文版
    Li-ion Battery Charger
    INTERSIL

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