ISL9N310AD3/ISL9N310AD3ST
January 2002
ISL9N310AD3/ISL9N310AD3ST
N-Channel Logic Level PWM Optimized UltraFET廬 Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
鈥?Fast switching
鈥?r
DS(ON)
= 0.008
鈩?/div>
(Typ), V
GS
= 10V
鈥?r
DS(ON)
= 0.0115
鈩?/div>
(Typ), V
GS
= 4.5V
鈥?Q
g
(Typ) = 17nC, V
GS
= 5V
鈥?Q
gd
(Typ) = 5.4nC
鈥?C
ISS
(Typ) = 1800pF
Applications
鈥?DC/DC converters
DRAIN (FLANGE)
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
G
D
GATE
SOURCE
S
TO-252
TO-251
MOSFET Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
胃
JA
= 52
o
C/W)
Pulsed
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
Parameter
Ratings
30
鹵
20
35
35
12
Figure 4
70
0.47
-55 to 175
Units
V
V
A
A
A
A
W
W/
o
C
o
C
I
D
P
D
T
J
, T
STG
Thermal Characteristics
R
胃
JC
R
胃
JA
R
胃
JA
Thermal Resistance Junction to Case TO-251, TO-252
Thermal Resistance Junction to Ambient TO-251, TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
2.14
100
52
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
N310AD
N310AD
Device
ISL9N310AD3ST
ISL9N310AD3
Package
TO-252AA
TO-251AA
Reel Size
330mm
Tube
Tape Width
16mm
N/A
Quantity
2500 units
75
漏2002 Fairchild Semiconductor Corporation
Rev. B January 2002
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