鈩?/div>
(Typ), V
GS
= 4.5V
鈥?Q
g
(Typ) = 24nC, V
GS
= 5V
鈥?Q
gd
(Typ) = 8nC
鈥?C
ISS
(Typ) = 2600pF
Applications
鈥?DC/DC converters
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
D
GATE
SOURCE
G
DRAIN
(FLANGE)
S
TO-263AB
TO-220AB
MOSFET Maximum Ratings
T
C
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Continuous (T
C
=
Pulsed
Power dissipation
Derate above 25
o
C
25
o
C,
V
GS
= 10V, R
胃
JC
=
43
o
C/W)
Parameter
Ratings
30
鹵
20
75
48
15
Figure 4
100
0.67
-55 to 175
Units
V
V
A
A
A
A
W
W/
o
C
o
C
I
D
P
D
T
J
, T
STG
Operating and Storage Temperature
Thermal Characteristics
R
胃
JC
R
胃
JA
R
胃
JA
Thermal Resistance Junction to Case TO-220, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
1.5
62
43
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
N308AS
N308AP
Device
ISL9N308AS3ST
ISL9N308AP3
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50
漏2002 Fairchild Semiconductor Corporation
Rev. B, January 2002