ISL9N305ASK8T
October 2002
ISL9N305ASK8T
N-Channel Logic Level PWM Optimized UltraFET
廬
Trench Power MOSFET
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
鈥?Fast switching
鈥?r
DS(ON)
= 0.004鈩?(Typ), V
GS
= 10V
鈥?r
DS(ON)
= 0.0064鈩?(Typ), V
GS
= 4.5V
鈥?Q
g
(Typ) = 38nC, V
GS
= 5V
鈥?Q
gd
(Typ) = 11.5nC
鈥?C
ISS
(Typ) = 4260pF
Applications
鈥?DC/DC converters
Branding Dash
SOURCE (1)
5
1
2
3
4
SOURCE (2)
SOURCE (3)
GATE (4)
DRAIN (8)
DRAIN (7)
DRAIN (6)
DRAIN (5)
SO-8
MOSFET Maximum Ratings
T
A
= 25擄C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
`I
D
Continuous (T
A
= 25
o
C, V
GS
= 10V)
Continuous (T
A
=
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
100
o
C,
V
GS
= 4.5V)
18
9
Figure 4
2.5
20
-55 to 150
A
A
A
W
mW/
o
C
o
Parameter
Ratings
30
鹵20
Units
V
V
C
Thermal Characteristics
R
胃JA
R
胃JA
R
胃JA
FR-4 board with 0.76 in
2
( 490 mm
2
) copper pad at 10 seconds
FR-4 board with 0.054
in
2
(
34.8
mm
2
) copper pad at 1000 seconds
FR-4 board with 0.0115 in
2
( 7.42 mm
2
) copper pad at 1000 seconds
50
152
189
o
C/W
C/W
o
C/W
o
Package Marking and Ordering Information
Device Marking
N305ASK8
Device
ISL9N305ASK8T
Reel Size
330mm
Tape Width
12mm
Quantity
2500units
漏2002 Fairchild Semiconductor Corporation
ISL9N305ASK8T Rev A1