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ISL9N2357D3ST Datasheet

  • ISL9N2357D3ST

  • 30V, 0.007 Ohm, 35A, N-Channel UltraFET Trench Power MOSFET

  • 9頁

  • FAIRCHILD

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ISL9N2357D3ST
Data Sheet
June 2002
30V, 0.007 Ohm, 35A, N-Channel
UltraFET
廬
Trench Power MOSFET
UltraFET
廬
Trench from Fairchild is a new advanced
MOSFET technology that achieves the lowest possible on-
resistance per silicon area while maintaining fast switching
and low gate charge. The reduced conduction and switching
losses extend battery life in notebook PCs, cellular
telephones and other portable information appliances and
improve the overall efficiency of high frequency DC-DC
converters used to power the latest microprocessors.
UltraFET
廬
Trench
Features
鈥?r
DS(ON)
= 0.006鈩?Typical,
V
GS
=
10V
鈥?Q
g
Total 85nC Typical,
V
GS
= 10V
鈥?Q
gd
16nC Typical
鈥?C
ISS
5600pF Typical
Packaging
ISL9N2357D3ST
JEDEC TO-252AA
DRAIN (FLANGE)
Symbol
D
G
GATE
SOURCE
S
Ordering Information
PART NUMBER
ISL9N2357D3ST
PACKAGE
TO-252AA
BRAND
N2357D
NOTE: When ordering, use the entire part number.
e.g., ISL9N2357D3ST.
Absolute Maximum Ratings
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
STG
T
L
T
pkg
R
胃JC
R
胃JA
NOTE:
1. T
J
= 25
o
C to 150
o
C.
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
ISL9N2357D3ST
30
30
鹵20
35
35
Figure 4
100
0.67
-55 to 175
300
260
UNITS
V
V
V
A
A
A
W
W/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1)
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1)
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Pulsed Drain Current
Power Dissipation
Derate Above 25
o
C
Operating and Storage Temperature
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case, TO-252
Thermal Resistance Junction to Ambient TO-252
1.5
100
o
C/W
o
C/W
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
漏2002 Fairchild Semiconductor Corporation
ISL9N2357D3ST Rev. B1

ISL9N2357D3ST 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 30 V

  • +/- 20 V

  • 35 A

  • 0.007 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • TO-252AA

  • Reel

  • 53 ns

  • - 55 C

  • 100 W

  • 69 ns

  • 2500

  • 84 ns

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