are very high-speed, low power, 2M-word by 8-bit CMOS
static RAM. The IS61WV20488ALL/BLL and
IS64WV20488BLL are fabricated using
ISSI
's high-
performance CMOS technology. This highly reliable
process coupled with innovative circuit design tech-
niques, yields higher performance and low power con-
sumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
The IS61WV20488ALL/BLL and IS64WV20488BLL
operate from a single power supply and all inputs are
TTL-compatible.
The IS61WV20488ALL/BLL and IS64WV20488BLL are
available in 48 ball mini BGA and 44-pin TSOP (Type II)
packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A20
DECODER
2M X 8
MEMORY ARRAY
VDD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
Copyright 漏 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
CONTROL
CIRCUIT
Integrated Silicon Solution, Inc. 鈥?www.issi.com 鈥?/div>
ISSI
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