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IRLZ34NL Datasheet

  • IRLZ34NL

  • HEXFET Power MOSFET

  • 275.65KB

  • 8頁

  • IRF

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PD - 9.1308A
PRELIMINARY
IRLZ34NS
HEXFET
廬
Power MOSFET
D
Logic-Level Gate Drive
l
Advanced Process Technology
l
Surface Mount
l
Dynamic dv/dt Rating
l
175擄C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
Description
l
V
DSS
= 55V
G
S
R
DS(on)
= 0.035鈩?/div>
I
D
= 27A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
D
2
Pak
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V聟
Continuous Drain Current, V
GS
@ 10V聟
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜聟
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
27
19
110
56
0.37
鹵16
110
16
5.6
10
-55 to + 175
300 (1.6mm from case)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient (PCB Mount,steady-state)**
Min.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
鈥撯€撯€撯€?/div>
Max.
2.7
40
Units
擄C/W
To Order
11/11/96

IRLZ34NL 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • HEXFET®

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 55V

  • 30A

  • 35 毫歐 @ 16A，10V

  • 2V @ 250µA

  • 25nC @ 5V

  • 880pF @ 25V

  • 3.8W

  • 通孔

  • TO-262-3，長引線，I²Pak，TO-262AA

  • TO-262

  • 管件

  • *IRLZ34NL

IRLZ34NL相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 6.7A I(D) |...
    ETC
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 14A I(D) | ...
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    HEXFET POWER MOSFET
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  • 英文版
    HEXFET? Power MOSFET
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    HEXFET POWER MOSFET
    IRF
  • 英文版
    N-channel enhancement mode Logic level TrenchMOS transistor
    PHILIPS
  • 英文版
    HEXFET? Power MOSFET
  • 英文版
    N-CHANNEL LOGIC LEVEL MOSFET
    SAMSUNG
  • 英文版
    N-CHANNEL LOGIC LEVEL MOSFET
    SAMSUNG [S...
  • 英文版
    N-CHANNEL LOGIC LEVEL MOSFET
    SAMSUNG
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A)
    IRF
  • 英文版
    HEXFET? Power MOSFET
  • 英文版
    HEXFET POWER MOSFET
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | ...
    ETC
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF [Inter...
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF

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