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IRLZ34L Datasheet

  • IRLZ34L

  • TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | ...

  • 388.15KB

  • 10頁(yè)

  • ETC

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上傳產(chǎn)品規(guī)格書

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PD - 9.905A
IRLZ34S/L
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Surface Mount (IRLZ34S)
Low-profile through-hole (IRLZ34L)
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
V
DSS
= 60V
R
DS(on)
= 0.050鈩?/div>
G
I
D
= 30A
S
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ34L) is available for low-
profile applications.
D 2 Pak
T O -2 6 2
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
C
= 25擄C
V
GS
E
AS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V聟
Continuous Drain Current, V
GS
@ 10V聟
Pulsed Drain Current
聛聟
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy聜聟
Peak Diode Recovery dv/dt
聝聟
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
30
21
110
3.7
88
0.59
鹵 10
220
4.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/擄C
V
mJ
V/ns
擄C
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
1.7
40
Units
擄C/W
8/25/97

IRLZ34L 產(chǎn)品屬性

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 30A

  • 50 毫歐 @ 18A，5V

  • 2V @ 250µA

  • 35nC @ 5V

  • 1600pF @ 25V

  • 3.7W

  • 通孔

  • TO-262-3，長(zhǎng)引線，I²Pak，TO-262AA

  • TO-262-3

  • 管件

  • *IRLZ34L

IRLZ34L相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 6.7A I(D) |...
    ETC
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 14A I(D) | ...
    ETC
  • 英文版
    HEXFET POWER MOSFET
    IRF
  • 英文版
    HEXFET? Power MOSFET
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | ...
    ETC
  • 英文版
    HEXFET POWER MOSFET
    IRF
  • 英文版
    N-channel enhancement mode Logic level TrenchMOS transistor
    PHILIPS
  • 英文版
    HEXFET? Power MOSFET
  • 英文版
    N-CHANNEL LOGIC LEVEL MOSFET
    SAMSUNG
  • 英文版
    N-CHANNEL LOGIC LEVEL MOSFET
    SAMSUNG [S...
  • 英文版
    N-CHANNEL LOGIC LEVEL MOSFET
    SAMSUNG
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A)
    IRF
  • 英文版
    HEXFET? Power MOSFET
  • 英文版
    HEXFET POWER MOSFET
    IRF [Inter...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | ...
    ETC
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF [Inter...
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF

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