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IRLZ24N Datasheet

  • IRLZ24N

  • HEXFET POWER MOSFET

  • 8頁(yè)

  • IRF

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PD - 91357C
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
IRLZ24N
V
DSS
= 55V
Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175擄C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
G
S
R
DS(on)
= 0.06鈩?/div>
I
D
= 18A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Avalanche Current聛
Repetitive Avalanche Energy聛
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
18
13
72
45
0.30
鹵16
68
11
4.5
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf聲in (1.1N聲m)
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
聳聳聳聳
聳聳聳聳
聳聳聳聳
Typ.
聳聳聳聳
0.50
聳聳聳聳
Max.
3.3
聳聳聳聳
62
Units
擄C/W
07/12/02

IRLZ24N相關(guān)型號(hào)PDF文件下載

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    描述
    廠商
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    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 6.7A I(D) |...
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    HEXFET? Power MOSFET
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  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | ...
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  • 英文版
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    IRF
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF [Inter...
  • 英文版
    Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)
    IRF

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