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IRLWI520A Datasheet

  • IRLWI520A

  • Advanced Power MOSFET

  • 7頁

  • FAIRCHILD

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Advanced Power MOSFET
FEATURES
s
Avalanche Rugged Technology
s
Rugged Gate Oxide Technology
s
Lower Input Capacitance
s
Improved Gate Charge
s
Extended Safe Operating Area
s
175鈩?Operating Temperature
s
Lower Leakage Current : 10
渭A
(Max.) @ V
DS
= 100V
s
Lower R
DS(ON)
: 0.176
惟
(Typ.)
IRLW/I520A
BV
DSS
= 100 V
R
DS(on)
= 0.22
惟
I
D
= 9.2 A
D
2
-PAK
2
I
2
-PAK
1
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25鈩?
Continuous Drain Current (T
C
=100鈩?
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25鈩? *
Total Power Dissipation (T
C
=25鈩?
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
Value
100
9.2
6.5
32
鹵20
112
9.2
4.9
6.5
3.8
49
0.33
- 55 to +175
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/鈩?/div>
鈩?/div>
300
Thermal Resistance
Symbol
R
胃JC
R
胃JA
R
胃JA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
3.04
40
62.5
鈩?W
Units
*
When mounted on the minimum pad size recommended (PCB Mount).
1

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